Zutaten für 4 Portionen... Für einen köstlichen Holunderblütensirup muss man 3 Tage Stehzeit berechnen. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Angular and angle-resolved energy distributions of neutral atoms sputtered from elemental targets under ion bombardment are investigated by numerical and analytic modeling. The GaN films were high in resistivity (>108 Ω-cm), but the InN layers were highly conducting, with an electron concn. from 10% to 100% and the target bias from -400 to -1800 V. The deposition rates as functions of these conditions are in the range 0.5-25 nm/min. causes a decrease in the band gap and an increase in the Urbach tail energy. Polycryst. Characterization of the Lα emission-line profile could be simplified by using a high-pressure discharge at ∼1 atm. The contribution of the collisional broadening to the Lα emission profile was estd. The GaN:H films deposited in nitrogen/hydrogen mixed gas, on the other hand, show an amorphous or amorphous-like nature. We found that using multilayer graphene buffer layers allows the growth of highly c-axis-oriented GaN films even on amorphous substrates. At a net sputtering pressure of ∼4 × 10-4 Torr, a 70:30 N2:Ar ratio and a sputtering voltage of 0.9 kV. A shielding mechanism based on metallic gallium has been identified, leading to the strongly increased luminescence quality in comparison to the non-shielded material. Zutaten für 4 Portionen 1 Pk Germ ... Chicken Nuggets Mit Selbstgemachten Pommes Frites, Broccoli-Blumenkohl-Salat Mit Gemüsemayonnaise, Salat Aus Kartoffeln, Löwenzahn Und Avocado. and achieve selectivities that were difficult to obtain with wet chem. Special emphasis is made on sub-keV ion bombardment, which is typical for sputter deposition sources. for a 1% compressive strain and decreases rapidly at higher strains whereas the diffusion barrier for a N adatom is lowest at a 1% tensile strain and increases as the strain increases on a N terminated surface. We fabricated red, green, and blue InGaN LEDs and confirmed their successful operation. Both Al layers and AlN intermediate layer were used to realize the growth of Ga polar GaN by RF-MBE. InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. gallium nitride films, 100 nm to 1 μm thick, were deposited under a range of conditions. A review. planar magnetron sputtering was studied. Through detailed study under plasma-assisted MBE, a phys. The optical absorption spectra at 300 K indicate the fundamental absorption edges at ∼3.38 and ∼3.7 eV for the highly oriented α-GaN and amorphous GaN:H films, resp. from the recombination rates of the radicals. etching condition, and with deep cavities in a high-temp. The coherently grown m-plane InGaN on ZnO exhibited narrow X-ray rocking curves compared with the m-plane GaN grown on ZnO. Evidence is presented suggesting that H may stabilize the surface of growing GaN. for Low-Temperature Plasma Sciences, Nagoya TEM revealed speckles in the epitaxial GaN, which could be identified as isolated basal stacking faults, acting as non-radiative recombination centers. At a 40% N2 deposition fraction, the N:Ga ratio is more or less const. have led to significant improvements on SRIM stopping accuracy. during sputtering were varied from room temp. 4 Gan Bien Rindfleisch, ein sehr leckeres Rezept aus der Kategorie Wok. the final oxygen concn. Etching mechanisms of selected materials, Si, SiO2, and low dielec.-const. for the first time. to the citations which reported the exptl. Hexagonal faceted individual, bunched, and hyperbunched GaN NRs were synthesized by using a catalyst-free process. m-Plane GaN and InGaN films were grown on m-plane ZnO substrates at ~350 °C by pulsed sputtering deposition. materials are discussed in detail. of hydrogen gas. GaN films grown under high N2 pressure also tend to have a h-WZ structure, whereas a c-ZB structure is preferred when grown under low N2 pressure. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. A large increase in interplanar spacing assocd. distance between Ga adatoms is affected by both Ga flux and N flux. Binds to ubiquitinated cargo proteins and is required for the sorting of endocytic ubiquitinated cargos into multivesicular bodies (MVBs) (PubMed:21757351, PubMed:22405001). of NH3, which is preferentially adsorbed by an electron acceptor (Ga atom), is the dominant reaction path to create N atoms for GaN growth. A normalized diffusion length (NDL, a dimensionless parameter) is introduced to provide further insight: the diffusion rate and time of Ga adatoms are detd. augmented by other procedures. Takashima, Seigou; Hori, Masaru; Goto, Toshio; Kono, Akihiro; Ito, Masafumi; Yoneda, Katsumi. Reviewers, Librarians The growth rate is considered to be controlled resp. (2) Improved corrections were made for the stopping of ions in compds. The abs. The authors have developed a measurement technique for abs. facets of the NRs are discussed and a condensation growth mechanism is proposed for the formation of bunched GaN NRs. Kann man schon am Vortag zubereiten. The EBEP shows great promise as a N atom source operating at an ultralow pressure. condition, H2 etching has both vertical and lateral etching directions; however, in a high-temp. The activation energies of the rate-limiting steps under etching pressures of 100 and 700 Torr are estd. to 450 °C, the pressure from 0.15 to 6.0 Pa, the nitrogen fraction of the deposition atm. Leite, D. M. G.; Pereira, A. L. J.; da Silva, L. F.; Dias da Silva, J. H. The structural and optical properties of nanocryst. Knox-Davies, E. C.; Shannon, J. M.; Silva, S. R. P. Polycryst. by the thermally activated desorption from the substrate, changes in the mean free path and concn. RHEED was used to monitor the transient behavior of the surface reconstruction upon the pulsed supply of either Ga or N at a given substrate temp. orientations or an amorphous-like nature. fraction was 4.9% at a N2 pressure of 0.05 Pa, an electron-beam current of 10 A, and an electron-beam acceleration voltage of 120 V. The EBEP potentially enables one to control the electron d. and electron energy independently with the electron-beam current and electron-beam acceleration voltages, resp. Hamilton, James R.; Tennyson, Jonathan; Huang, Shuo; Kushner, Mark J. Electron impact cross sections sets are constructed for the nitrogen trifluoride, nitrogen difluoride and nitrogen monofluoride mols. The PL emission in the GaN:H film may arise from cryst. Fujikane, Masaki; Inoue, Akira; Yokogawa, Toshiya; Nagano, Shijo; Nowak, Roman. (4) A self-contained SRIM module has been included to allow SRIM stopping and range values to be controlled and read by other software applications. Yeh, Yen-Hsien; Chen, Kuei-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Yu, Tzu-Yi; Lee, Wei-I. For example, the diffusion barrier of a Ga adatom is max. Lekhal, K.; Andre, Y.; Trassoudaine, A.; Gil, E.; Avit, G.; Cellier, J.; Castelluci, D. GaN nanorods (NRs) with exceptional crystal-defined morphologies were grown by near-equil. GaN NRs with a diam. 1 Bewertung: Ø 3,3. The surfaces of GaN have different profiles after being etched in H2; they resemble a plane decorated with columns and mooring posts in a low-temp. Zutaten für 4... Eine klare Kalbssuppe kann mit beliebiger Suppeneinlage serviert werden. ranging from 500 to 1000° clearly showed a dependence of orientation texture and surface morphol. in the range of 125-700 nm and a length in the range of 0.9-3 μm were grown in a record short process time of 30 min. The purpose was to inflict a bit more damage. Für das Rezept benötigt man über zwei Stunden Kochzeit. Houle, Anne-Marie; Cheikhelard, Alaa; Barrieras, Diego; Rivest, Marie-Christine; Gaudreault, Valérie. The growth of sputtered GaN at low temperature is strongly desired to realize the dissemination of low-cost GaN high electron mobility transistor devices for next-generation communication technology. low k film etching, while N radicals could not etch without ion bombardments. Shon, Jeong Woo; Ohta, Jitsuo; Ueno, Kohei; Kobayashi, Atsushi; Fujioka, Hiroshi. A model of the adsorption-diffusion-desorption kinetics of Ga and N adatoms was developed to understand the dynamics of the surface reconstruction transitions quant. Oxygen contamination of 3-30 at. waste disposal in manufg. Since its introduction in 1985, major upgrades are made about every six years. On the other hand, N radicals were found to be effective for the formation of protection layer on the sidewall against the etching by the H radicals. and the structural properties were analyzed by field emission SEM and X-ray diffraction spectroscopy (XRD). Zutaten für 12 Portionen 1 Stk Eigelb 200... Besonders für viele Gäste ist das Rezept vom Chili con Carne mit Faschiertem ideal. N and H radical densities were estd. Excess Ga at low N2 concns. Cathodoluminescence obsd. Xu, K.; Yano, N.; Jia, A. W.; Yoshikawa, A.; Takahashi, K. The authors demonstrated the polarity control of GaN on sapphire by TMAl preflow in LP-MOVPE growth, and proposed a model of "two monolayers of Al" giving the qual. nitrogen atom d. in an electron-beam-excited plasma (EBEP) operating at an ultralow pressure has been studied by vacuum UV absorption spectroscopy, employing a microdischarge hollow-cathode lamp. This resistivity is much higher than the value reported earlier. In this study, we explore details on the epitaxial sputter deposition of GaN with a particular emphasis on ion damage. of GaN, being of either energetic or entropic character depending on surface termination. The effects of Al layer thickness and AlN intermediate layer growth procedure on GaN epilayer polarity were investigated. Interactivity between humans and smart systems, including wearable, body-attachable, or implantable platforms, can be enhanced by realization of multifunctional human–machine interfaces, where a variety of sensors collect information about the surrounding environment, intentions, or physiological conditions of the human to which they are attached. ; the av. condition, it has only the vertical etching direction. oxygen incorporation rate changes very little, it is the relative film deposition rate which dets. deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coeffs. Zutaten für 2 Portionen 6 Stk Feigen... Für Menschen die generell Tierprodukte ablehnen, haben wir ein tolles Rezept von den veganen Faschingskrapfen. rates and Langmuir-Hinshelwood adsorption are introduced. Please reconnect, Authors & from the underlying Al2O3 substrate. A thick GaN layer was grown on a H2-etched GaN template, and it has self-sepd. In Yang Bian, ed., The Time is Not Ripe: Contemporary China’s Best Writers and Their Stories. The cross section set constructed is tested in a global model simulation of a low pressure, inductively coupled plasma based on a Ar/NF3/O2 initial gas mixt. Substrate electrode temps. N-stable growth and growth under at. H enhanced the growth rate of inversion domains with respect to the surrounding matrix, while growth under Ga-stable conditions resulted in a more nearly equal growth rate. (3) New heavy ion stopping calcns. For SRIM-2010, the following major improvements have been made: (1) About 2800 new exptl. data are included. GaN films grown on substrates with lower mismatches tend to have a h-WZ structure, but when grown on substrates with higher mismatches, a c-ZB structure is preferred. Zutaten für 4 Portionen 1 Stk ... Feigen mit Ziegenkäse und Honig sind eine tolle Vorspeise oder kleine Snack am Abend. The best films were deposited at 500°, 30 W and 600°, 45 W, which corresponds to conditions where the out diffusion from the film is low. Miyazaki, Takayuki; Takada, Kouhei; Adachi, Sadao; Ohtsuka, Kohji. Electrically stimulated muscle contraction is a potential clinical therapy to treat sepsis-induced myopathy; however, whether sepsis alters contraction-induced anabolic signaling is unknown. Schiaber, Ziani S.; Leite, Douglas M. G.; Bortoleto, Jose R. R.; Lisboa-Filho, Paulo N.; da Silva, Jose H. D. The combined effects of substrate temp., substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. The hillocks were directly linked to the presence of inversion domains which originated in the nucleation layer. In MBE, the lifetime of radicals is so long that almost all radicals effused from a radical source are supplied to a surface. Das Rezept kann mit beliebiger Suppeneinlage serviert werden. N-stable growth produces a granular surface morphol. were carried out to study the binding energies and diffusion barriers for adatoms on GaN surfaces. The results showed that both the AlN intermediate layer and Al inserted layers could change N polarity to Ga polarity. The measured N atom d. is ∼6×1011 cm-3, and the dissocn. The behavior of etch rate corresponded well to that of H radical d. H radicals were found to be important species for org. The x-ray diffraction anal. Das Rezept ist ein toller Durstlöscher in der heißen Jahreszeit. The biaxial stress is compressive and shows an increasing trend with the target bias and N2 concn., reaching 4.7 GPa at 75% N2. The FTIR spectra indicate that the GaN:H films show peaks arising from hydrogen-related bonds at ∼1000 and ∼3200 cm-1, in addn. Tada, Shigekazu; Takashima, Seigou; Ito, Masafumi; Hori, Masaru; Goto, Toshio; Sakamoto, Yuichi. Ga nitride films of the correct stoichiometry and of high resistivity (1013 Ω cm) can be obtained. N-radical densities during GaN growth were numerically estd. The influence of growth temp. GaN and GaN:H films grown by r.f.-magnetron sputtering are focused here. Plays a role in the proteasomal degradation of ubiquitinated cell-surface proteins, … Grandusky, J. R.; Jindal, V.; Raynolds, J. E.; Guha, S.; Shahedipour-Sandvik, F. D. functional calcns. Gan bien rindfleisch von zekine | chefkoch.de Rezepte, die Sie lieben werden. on the order of 1011-1012 cm-3 and 1012-1013 cm-3, resp. X-ray diffraction (XRD), Fourier transform IR (FTIR), optical absorption, and photoluminescence (PL) spectroscopy have been used to characterize the sputter-deposited GaN films. semiempirical description is suggested for anisotropic energy distributions. sputtering, was introduced to integrated circuit manufg. the products of electron impact ionisation is proposed and tested for ammonia. A full catalog of stopping power plots can be downloaded at www.SRIM.org. Convert documents to beautiful publications and share them worldwide. (c) 2018 American Institute of Physics. At pressures of 10-100 Pa where plasma-assisted MOCVD was performed, the lifetime of the radicals is of the same order as the flight time of the radicals from the cell to a substrate. Scaling laws that define the distribution anisotropies are formulated. In contrast, Ga-stable growth results in a flat surface morphol. A semi-empirical method of estg. If we can utilize a low-cost epitaxial growth process, such as sputtering on large-area substrates, we can fabricate large-area InGaN light-emitting displays. as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liq. model for low-temp. characteristics of the absorption intensity when the optical thickness of the plasma was varied. low k film employing N-H plasmas. The surfaces phases of GaN constitute kinetic barriers for the decompn. These values of Hall mobility are the highest ever reported for GaN films. Beijing: FLP, 1991, 1-14. The growth conditions of these films in an radio-frequency diode sputtering system were studied in detail. An understanding of the changes in adatom binding and diffusion under differing growth conditions was obtained. data points. Refs. increase because of the decrease in defect d. are greater than the problems caused by the strongly strained lattice that occur at higher temps. to be 3.22 and 3.77 eV, resp. GaN particles embedded in the amorphous GaN matrix. The mech. 2004-07-01. We use cookies to offer you a better experience, personalize content, tailor advertising, provide social media features, and better understand the use of our services. The binding energies and diffusion barriers were calcd. It was found that the critical thickness of the m-plane GaN films grown on ZnO lies between 25 and 62 nm, whereas 180-nm-thick m-plane In0.12Ga0.88N can be coherently grown on ZnO substrates, which is explained well by theoretical calculations based on an energy-balance model. Bundan tam 26 yıl önce bombalanan Özgür Ülke gazetesinde muhabir olarak görev yapan Zekine Türkeri, o günleri böyle anlattı. Myers, T. H.; Hirsch, L. S.; Romano, L. T.; Richards-Babb, M. R. Growth of GaN by radio-frequency-plasma MBE leads to different surface morphologies for N-stable growth vs. Ga-stable growth. at substrate temps. etching condition. The effect of self-absorption in the MHCL was reduced to an insignificant level by decreasing the H2 partial pressure. In the present work, they intended to extend this method to MBE growth and testify the validity of this model. Weitere Ideen zu einfache gerichte, rezepte, hauptspeise. Some basic principles related to plasma etching such as evapn. In contrast, those values in c-plane (0001) GaN were higher such as 323.8 GPa, 20.0 GPa and 21.2 GPa, resp. the Altmetric Attention Score and how the score is calculated. The optical absorption expts. Excess Al coverage on AlN surface is crucial for polarity inversion by AlN. [NHMS 088] Siegfried G. Richter, Charles Horton, Klaus Ohlhafer Mani in Dublin.pdf - Free ebook download as PDF File (.pdf), Text File (.txt) or read book online for free. % has a major effect on the optical properties of the films, increasing the band gap values from 3.02 to °4.0 eV and the Urbach tail energies from around 150 to 840 meV and decreasing the refractive index from 2.46 to 2.03. The most cryst. at 1:1. from the satn. H-atom densities in process plasmas using vacuum UV absorption spectroscopy employing a high-pressure microdischarge hollow-cathode lamp (MHCL) as a Lyman α (Lα, 121.6 nm) emission light source. Plasma etching, a revolutionary extension of the technique of phys. By analyzing the correlation between dislocation d. distribution and yield shear stress, we derived a relational equation that reprised the inverse Hall-Petch relation. Wer entwickelt bei Ihnen die leckeren Rezepte. By changing the argon to nitrogen ratio, we adjust the growth mode from island to layer growth. This work investigates the morphol. is essential to realize low-cost and large-area GaN-based lighting and display. (5) Individual interat. 26.02.2018 - Erkunde Cosimas Pinnwand „Heiss auf Reis“ auf Pinterest. Corp., 2426-1 Mikami, Yasu, Shiga 520-2323, Japan, The preparation and properties of vapor-deposited single-crystalline GaN, Preparation and properties of vapor-deposited single-crystalline gallium nitride, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaE3cXis1enuw%253D%253D&md5=a5cc37bed8470e0d9f7e6e2fa4f8e689, Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer, Metalorganic vapor phase epitaxial growth of a high quality gallium nitride (GaN) film using an aluminum nitride (AlN) buffer layer, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaL28XpvFOisw%253D%253D&md5=f22fc0424cf5e7f825ec4da3a48371d4, Gallium nitride growth using gallium nitride buffer layer, Japanese Journal of Applied Physics, Part 2: Letters, 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temperatures, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28XjslGltb0%253D&md5=5d486b2739865cb9e8fa97dc307cb433, Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering, Journal of Applied Physics (Melville, NY, United States), https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhslKrt7rL&md5=4f689de2cc24cd89dd3a0da16dc9fb2c, Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28XhtlCgt7nK&md5=5e93e360b376a8078d9c09c89ed55ba8, Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering, 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atomic hydrogen on growth of (0001) GaN by molecular beam epitaxy, Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK1cXkvFSisr0%253D&md5=c6eded83666af0026e9ccb4f804f13d2, Production and control of large-area plasmas for meters-scale flat-panel-display processing with multiple low-inductance antenna modules, Vacuum ultraviolet absorption spectroscopy employing a microdischarge hollow-cathode lamp for absolute density measurements of hydrogen atoms in reactive plasmas, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK1MXotVWht7c%253D&md5=24e2afa05c99b25d86a55604b50598c2, Measurement and control of absolute nitrogen atom density in an electron-beam-excited plasma using vacuum ultraviolet absorption spectroscopy, 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https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3MXhtFGitLbJ&md5=6cfa510dd2bb9081f031b6a8d7737d99, Calculated cross sections for electron collisions with NF, Calculated cross sections for electron collisions with NF3, NF2 and NF with applications to remote plasma sources, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1cXitVSgsL3F&md5=865a6c7c9903e925367a7de7bc8ac26f, Surface kinetics of zinc-blende (001) GaN, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK28Xlt1aisL4%253D&md5=dd304c1627f72fccb748c437b2bdba11, Estimates of differential sputtering yields for deposition applications, Journal of Vacuum Science & Technology, A: Vacuum, Surfaces, and Films, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD3MXot1Sru7k%253D&md5=e7a7118f9a5184fb592333589210b9cb, Model for low-temperature growth of gallium nitride, Model for Low-Temperature Growth of Gallium Nitride, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XhtlKnurrN&md5=ba9a9d75de7abacd86327c48a063163c, Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature, Density functional calculations of the strain effects on binding energies and adatom diffusion on (0001) GaN surfaces, Density functional calculations of the strain effects on binding energies and adatom diffusion on (0 0 0 1) GaN surfaces, Materials Science & Engineering, B: Advanced Functional Solid-State Materials, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXjtF2lu78%253D&md5=85f33e1e78f382f03fd2025f5f55f3bb, Suppression of plasma-induced damage on GaN etched by a Cl, Essential change in crystal qualities of GaN films by controlling lattice polarity in molecular beam epitaxy, Polarity control of GaN grown on sapphire substrate by RF-MBE, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD38XjvVSmt7Y%253D&md5=824d956a8b9d780de63c6fa818d90c32, Review of polarity determination and control in GaN, Mechanical properties characterization of c-plane (0001) and m-plane (101̅0) GaN by nanoindentation examination, Mechanical properties characterization of c-plane (0001) and m-plane (10-10) GaN by nanoindentation examination, Physica Status Solidi C: Current Topics in Solid State Physics, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3MXhtFOnsL4%253D&md5=b5dd51a37aea07337f655b1a47066745, Defect generation by nitrogen during pulsed sputter deposition of GaN, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1cXitVyiu7%252FM&md5=8c8954d56fdf97ab2ff5ccd378f5e635, Nitrogen radical densities during GaN growth by molecular beam epitaxy, plasma-assisted metalorganic chemical vapor deposition, and conventional metalorganic chemical vapor deposition, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK2sXhtFyjurc%253D&md5=b832aee87274c038543706364dad2b35, Plasma etching: Yesterday, today, and tomorrow, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhsVShs7nK&md5=c32da8c29a4f89984ad5f13db7fc0bd2, SRIM - The stopping and range of ions in matter, SRIM - The stopping and range of ions in matter (2010), Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3cXmtFait70%253D&md5=d51a65bf480571b7d608ccf7fd5e380f, Your Mendeley pairing has expired.